FDMS8670S Rev.C3

www.fairchildsemi.com

6

SyncFET Schottky body diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel

with

PowerTrench

MoSFET.

This

diode

exhibits

similar

characteristics to a discrete external Schottky diode in parallel

with a MOSFET. Figure 14 shows the reverses recovery

characteristic of the FDMS8670S.

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

Figure 14. FDMS8670S SyncFET Body

Diode reverse recovery characteristics

0

5

10

15

20

25

30

1E-5

1E-4

1E-3

0.01

0.1

T

T

V

T

Figure 15. SyncFET Body Diode reverse

leakage vs drain to source voltage

0

5

10

15

20

25

30

1E-5

1E-4

1E-3

0.01

0.1

VDS, REVERSE VOLTAGE (V)

0

5

10

15

20

25

30

1E-5

1E-4

1E-3

0.01

0.1

T

T

T

V

TIME: 12.5nS/Div