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FDMS8670S Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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FDMS8670S Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page FDMS8670S Rev.C3 www.fairchildsemi.com 6 SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8670S. Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. Typical Characteristics (continued) Figure 14. FDMS8670S SyncFET Body Diode reverse recovery characteristics 0 5 10 15 20 25 30 1E-5 1E-4 1E-3 0.01 0.1 T J = 100 oC T J = 125 oC V DS, REVERSE VOLTAGE (V) T J = 25 oC Figure 15. SyncFET Body Diode reverse leakage vs drain to source voltage 0 5 10 15 20 25 30 1E-5 1E-4 1E-3 0.01 0.1 TA = 125oC TA = 100oC TA = 25oC VDS, REVERSE VOLTAGE (V) 0 5 10 15 20 25 30 1E-5 1E-4 1E-3 0.01 0.1 T J = 100 oC T J = 125 oC T J = 25 oC V DS, REVERSE VOLTAGE (V) TIME: 12.5nS/Div |
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Similar Description - FDMS8670S |
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