©2007 Fairchild Semiconductor Corporation

FDMS3572 Rev.C1

www.fairchildsemi.com

1

tm

February 2007

FDMS3572

80V, 22A, 16.5m

Ω

Features

Low Miller Charge

Optimized efficiency at high frequencies

RoHS Compliant

General Description

UItraFET

devices

combine

characteristics

that

enable

benchmark efficiency in power conversion applications.

these devices are ideal for high frequency DC to DC converters.

Application

DC - DC Conversion

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

80

V

Gate to Source Voltage

±20

V

Drain Current -Continuous (Package limited)

22

A

-Continuous (Silicon limited)

48

-Continuous

(Note 1a)

8.8

-Pulsed

50

Power Dissipation

78

W

Power Dissipation

(Note 1a)

2.5

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

1.6

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS3572

FDMS3572

Power 56

13’’

12mm

3000 units

G

S

S

S

Pin 1

Power 56 (Bottom view)

D

D

D

D

4

3

2

1

5

6

7

8

G

S

S

S

D

D

D

D