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FDM3622 Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FDM3622
Description  N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDM3622 Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FDM3622 Rev.B
www.fairchildsemi.com
4
Figure 7.
0.1
1
10
100
0.01
0.1
1
10
100
400
DC
1s
100ms
10ms
1ms
100us
SINGLE PULSE
TJ = MAX RATED
RθJA = 135
oC/W
TA = 25oC
r
D
S(on)
LIMITED
VDS, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
Figure 8.
1
10
0.001
0.01
0.1
1
10
100
20
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25oC
STARTING TJ = 150oC
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
Uncalamped Inductive
Switching Capability
Figure 9. Normalized Power dissipation
vs Ambient Temperature
TA, AMBIENT TEMPERATURE (oC)
0
025
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
Figure 10. Maximum Continuous Drain Current
vs Ambient Temperature
0
2
4
6
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
VGS = 10V
Figure 11.
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
VGS = VDS, ID = 250μA
Normalized Gate Threshold voltage
vs Junction Temperature
Figure 12. Normalized Drain to Source Breakdown
Voltage vs Junction Temperature
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
ID = 250μA
Typical Characteristics T
J = 25°C unless otherwise noted


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