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2N2857 Datasheet(PDF) 2 Page - Advanced Power Technology

Part No. 2N2857
Description  RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Maker  ADPOW [Advanced Power Technology]
Homepage  http://www.advpowertech.com
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2N2857 Datasheet(HTML) 2 Page - Advanced Power Technology

   
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2N2857
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25
°°C)
C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
15
-
-
V
BVCBO
Collector-Base Breakdown Voltage
(IC=1.0
µAdc, IE=0)
30
-
-
V
BVEBO
Emitter-Base Breakdown Voltage
(IE = 10
µAdc, IC = 0)
2.5
-
-
V
ICBO
Collector Cutoff Current
(VCE = 15 V, IE = 0 V)
-
-
.01
µA
HFE
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 V)
30
-
150
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
fT
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 V, f = 100 MHz)
1.6
-
GHz
NF
Noise Figure (50 Ohms)
(IC = 1.5 mAdc, VCE = 6 V, f = 500 MHz)
5.5
dB
FUNCTIONAL
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
G
U max
Maximum Unilateral Gain
IC = 12 mAdc, VCE = 10V,
f = 500 MHz
-
13
-
dB
MAG
Maximum Available Gain
IC = 12 mAdc, VCE = 10V,
f = 500 MHz
-
13.5
-
dB
|S21|
2
Insertion Gain
IC = 12 mAdc, VCE = 10V,
f = 500 MHz
9.5
10.5
-
dB


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