FDD6637 datasheet(3/8 Pages) FAIRCHILD

Part #	FDD6637

Description	35V P-Channel PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 8 page

FDD6637 Rev. C2(W)

www.fairchildsemi.com

D

R

P

DS(ON)

Electrical Characteristics

T

A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain–Source Diode Characteristics

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V, IS = –14 A

(Note 2)

–0.8

–1.2

V

trr

Diode Reverse Recovery Time

28

ns

Qrr

Diode Reverse Recovery Charge

IF = –14 A,

diF/dt = 100 A/µs

15

nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 40°C/W when mounted on a

1in

2 pad of 2 oz copper

b) RθJA = 96°C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at T C = 25°C and RDS(on) is at T J(max) and VGS = 10V. Package current limitation is 21A

4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.

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