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IRG4PC50KPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRG4PC50KPBF
Description  Short Circuit Rated UltraFast IGBT
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC50KPBF Datasheet(HTML) 2 Page - International Rectifier

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IRG4PC50KPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
—
200 300
IC = 30A
Qge
Gate - Emitter Charge (turn-on)
—
25
38
nC
VCC = 400V
See Fig.8
Qgc
Gate - Collector Charge (turn-on)
—
85
130
VGE = 15V
td(on)
Turn-On Delay Time
—
38
—
tr
Rise Time
—
34
—
TJ = 25°C
td(off)
Turn-Off Delay Time
—
160 240
IC = 30A, VCC = 480V
tf
Fall Time
—
79
120
VGE = 15V, RG = 5.0Ω
Eon
Turn-On Switching Loss
—
0.49
—
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
—
0.68
—
mJ
See Fig. 9,10,14
Ets
Total Switching Loss
—
1.12 1.4
tsc
Short Circuit Withstand Time
10
—
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
td(on)
Turn-On Delay Time
—
37
—
TJ = 150°C,
tr
Rise Time
—
35
—
IC = 30A, VCC = 480V
td(off)
Turn-Off Delay Time
—
260
—
VGE = 15V, RG = 5.0Ω
tf
Fall Time
—
170
—
Energy losses include "tail"
Ets
Total Switching Loss
—
2.34
—
mJ
See Fig. 11,14
LE
Internal Emitter Inductance
—
13
—
nH
Measured 5mm from package
Cies
Input Capacitance
— 3200 —
VGE = 0V
Coes
Output Capacitance
—
370
—
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
—
95
—
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „
18
—
—
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ TemperatureCoeff.ofBreakdownVoltage
—
0.47
—
V/°C VGE = 0V, IC = 1.0mA
—
1.84 2.2
IC = 30A
VGE = 15V
VCE(ON)
Collector-to-EmitterSaturationVoltage
—
2.19
—
IC = 52A
See Fig.2, 5
—
1.79
—
IC = 30A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ TemperatureCoeff.ofThresholdVoltage
—
-12
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance …
17
24
—
S
VCE = 100 V, IC = 30A
—
—
250
VGE = 0V, VCE = 600V
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 5000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0


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