 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRFZ34NPBF Datasheet(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRFZ34NPBF Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRFZ34NPbF 2 www.irf.com Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 410µH RG = 25Ω, IAS = 16A. (See Figure 12) ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA RDS(ON) Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, ID = 16A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A ––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 34 ID = 16A Qgs Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.0 ––– VDD = 28V tr Rise Time ––– 49 ––– ID = 16A td(off) Turn-Off Delay Time ––– 31 ––– RG = 18Ω tf Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 700 ––– VGS = 0V Coss Output Capacitance ––– 240 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 100 ––– ––– 29 A nH LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– IDSS Drain-to-Source Leakage Current IGSS ns µA nA S D G S D G |
Similar Part No. - IRFZ34NPBF |
|
Similar Description - IRFZ34NPBF |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
