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IRFL110PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFL110PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFL110PbF 2 www.irf.com RDS(on) StaticDrain-to-SourceOn-Resistance ––– ––– 0.54 Ω VGS = 10V, ID = 0.90A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.1 ––– ––– S VDS = 50V, ID = 0.90A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 8.3 ID = 5.6A Qgs Gate-to-Source Charge ––– ––– 2.3 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 3.8 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 6.9 ––– VDD = 50V tr Rise Time ––– 16 ––– ns ID = 5.6A td(off) Turn-Off Delay Time ––– 15 ––– RG = 24 Ω tf Fall Time ––– 9.4 ––– RD = 8.4 Ω, See Fig. 10 nH Ciss Input Capacitance ––– 180 ––– VGS = 0V Coss Output Capacitance ––– 81 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 15 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 5.6A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: VDD=25V, starting TJ = 25°C, L = 25 mH RG = 25Ω, IAS = 3.0A (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 1.5A, VGS = 0V trr Reverse Recovery Time ––– 100 200 ns TJ = 25°C, IF = 5.6A Qrr Reverse RecoveryCharge ––– 0.44 0.88 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– ––– ––– 12 1.5 A S D G Between lead, 6mm(0.25in) from package and center of die contact. LS Internal Source Inductance Internal Drain Inductance LD ––– 4.0 ––– ––– 6.0 ––– ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA Parameter Min. Typ. Max. Units Conditions Source-Drain Ratings and Characteristics |
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