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OQ2545BHP Datasheet(PDF) 11 Page - NXP Semiconductors

Part # OQ2545BHP
Description  SDH/SONET STM16/OC48 laser drivers
Download  28 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

OQ2545BHP Datasheet(HTML) 11 Page - NXP Semiconductors

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1999 Aug 24
11
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
RF connections
A coupled stripline or microstrip with an odd mode
characteristic impedance of 50
Ω (nominal value) should
be used for the differential RF connections on the PCB.
This applies to the CML differential line pairs on pins CIN
and CINQ, DIN and DINQ, CLOOP and CLOOPQ,
DLOOP and DLOOPQ, and MON and MONQ.
In addition, the following lines should not differ in length by
more than 10 mm:
• Lines to pins DIN, DINQ, CIN and CINQ
• Lines to pins CLOOP, CLOOPQ, DLOOP
and DLOOPQ.
ESD protection
In order to achieve high frequency performance, it has
been necessary to make adjustments to the standard ESD
protection scheme. Inputs on pins DIN, DINQ, CIN, CINQ,
DLOOP, DLOOPQ, CLOOP and CLOOPQ and outputs on
pins MON and MONQ are protected by a reduced ESD
structure. The outputs on pins LA and LAQ have no
protection against ESD, so extra care should be taken
with these pins.
Power consumption
The total power consumption of the OQ2545(B)HP
depends strongly on the application. A rough guideline is
given to estimate the power consumption for a specific
application.
The total power dissipation (Ptot) consists of the following
terms:
Ptot =PVEE1 +PVCC +PVEE2 − (PLA +PLAQ +PIBIAS)
where
1. PVEE1 and PVCC represent the power consumption
terms corresponding with the supplies VEE1 and VCC,
required for the digital section and the TTL interfaces.
These 2 terms are application independent and only
depend on the process spread and supply voltages.
Values can be found in Chapter “Characteristics”.
2. PVEE2 =IEE2 ×VEE2 represents the power
consumption of the analog section, including the
modulation current and bias current. It is mainly
determined by the magnitude of the modulation
current and bias current and the additional biasing
currents of the preamplifier and emitter followers.
The supply current is the summation:
IEE2 =55mA+1.5 × Imod +IIBIAS +3 × IAMPADJ
+55
× IEFADJ
where IAMPADJ and IEFADJ are the currents through
pins AMPADJ and EFADJ, respectively.
These figures are valid for nominal supply voltage and
temperature and are given for rough indication only.
3. PLA, PLAQ and PIBIAS represent the dissipation in the
external load (laser or EAM), caused by the
modulation and bias current. The expressions are:
PLA = 0.5 × ILA(ext) ×VLA,
PLAQ = 0.5 × ILAQ(ext) ×VLAQ and
PIBIAS =IIBIAS ×VIBIAS.
The factor 0.5 represents the fact that, for a
(scrambled) random data pattern, the modulation
switch will be switched to either side 50% of the time
integrated over many cycles.
VLA and VLAQ are the voltages on pins LA and LAQ
when the modulation current flows through pins LA
and LAQ, respectively and the values depend on the
external laser or EAM supply voltage, the forward
diode voltage drop and additional loads.
To increase the dissipation in the external load and
thereby decreasing the dissipation in the IC, the values
of
VLA or VLAQ can be increased by adding
additional external resistors. A minimum value of VLA
and VLAQ is required for proper operation of the IC.
A similar argument is valid for power consumption due
to the bias current. It should be noted that this is
important, because it provides an easy way to lower
the power dissipation of the IC.
Example
Consider the following example to illustrate the calculation
of Ptot. A laser diode operates at 0.3 mW (optical low) and
3 mW (optical high), i.e. an extinction ratio of 10 dB.
For this laser type this requires IBIAS = 20 mA and
ILA(ext) = 40 mA (see Fig.8).
The series resistance of the laser is 30
Ω. Therefore the
ratio is:
Consequently, a total Imod = (130/100) × 40 = 52 mA will
be generated by the IC.
The impedance connected to pin LAQ is 30
Ω as well.
As a result also ILAQ(ext) = 40 mA and ILAQ(int) =12mA
(see Fig.9).
In first instance the eye pattern is of adequate quality and
the preamplifier and emitter follower do not need additional
bias current, i.e. pins AMPADJ and EFADJ can be left
open-circuit.
I
LA int
()
I
LA ext
()
------------------
30
100
----------
=


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