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10ETF10FP Datasheet(PDF) 2 Page - International Rectifier

Part No. 10ETF10FP
Description  FAST SOFT RECOVERY RECTIFIER DIODE
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

10ETF10FP Datasheet(HTML) 2 Page - International Rectifier

  10ETF10FP Datasheet HTML 1Page - International Rectifier 10ETF10FP Datasheet HTML 2Page - International Rectifier 10ETF10FP Datasheet HTML 3Page - International Rectifier 10ETF10FP Datasheet HTML 4Page - International Rectifier 10ETF10FP Datasheet HTML 5Page - International Rectifier 10ETF10FP Datasheet HTML 6Page - International Rectifier 10ETF10FP Datasheet HTML 7Page - International Rectifier  
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2
10ETF..FP QUIET
IR Series
Bulletin I2165 06/03
www.irf.com
I
F(AV) Max. Average Forward Current
10
A
@ T
C = 95° C, 180° conduction half sine wave
I
FSM
Max. Peak One Cycle Non-Repetitive
160
10ms Sine pulse, rated VRRMapplied
Surge Current
185
10ms Sine pulse, no voltage reapplied
I2t
Max. I2t for fusing
128
10ms Sine pulse, rated VRRMapplied
180
10ms Sine pulse, no voltage reapplied
I2√t
Max. I2√t for fusing
1800
A2√s
t = 0.1 to 10ms, no voltage reapplied
Part Number
V
RRM , maximum
V
RSM , maximum non repetitive
I
RRM
peak reverse voltage
peak reverse voltage
150°C
VV
mA
10ETF10FP
1000
1100
4
10ETF12FP
1200
1300
Voltage Ratings
Absolute Maximum Ratings
Electrical Specifications
Recovery Characteristics
Parameters
10ETF..FP Units
Conditions
A
A2s
V
FM
Max. Forward Voltage Drop
1.33
V
@ 10A, T
J = 25°C
r
t
Forward slope resistance
22.9
mΩ
T
J =
150°C
VF(TO) Threshold voltage
0.96
V
I
RM
Max. Reverse Leakage Current
0.1
T
J =
25 °C
4TJ = 150 °C
Parameters
10ETF..FP Units
Conditions
V
R = rated VRRM
mA
t
rr
Reverse Recovery Time
310
ns
I
F @ 10Apk
I
rr
Reverse Recovery Current
4.7
A
@ 25A/ µs
Qrr
Reverse Recovery Charge
1.05
µC
@ 25°C
S
Typical Snap Factor
0.6
Parameters
10ETF..FP Units
Conditions


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