tm

©2006 Fairchild Semiconductor Corporation

FDB045AN08A0 Rev. A1

May 2006

www.fairchildsemi.com

FDB045AN08A0

75V, 80A, 4.5m

Ω

Features

• Low Miller Charge

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82684

Applications

• 42V Automotive Load Control

• Starter / Alternator Systems

• Electronic Power Steering Systems

• Electronic Valve Train Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V systems

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

75

V

Gate to Source Voltage

±20

V

Drain Current

90

A

19

A

Pulsed

Figure 4

A

Single Pulse Avalanche Energy (Note 1)

600

mJ

Power dissipation

310

W

2.0

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

Thermal Resistance Junction to Case TO-263

0.48

Thermal Resistance Junction to Ambient TO-263 (Note 2)

62

43

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

D

G

S

TO-263AB

FDB SERIES

GATE

SOURCE

DRAIN

(FLANGE)