ISL6610IRZ datasheet(4/11 Pages) INTERSIL

Part #	ISL6610IRZ

Description	Dual Synchronous Rectified MOSFET Drivers

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Manufacturer	INTERSIL [Intersil Corporation]

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4 / 11 page

4

FN6395.0

November 22, 2006

Absolute Maximum Ratings

Thermal Information

Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V

Input Voltage (VEN, VPWM) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V

BOOT Voltage (VBOOT-GND). . . -0.3V to 25V (DC) or 36V (<200ns)

BOOT To PHASE Voltage (VBOOT-PHASE) . . . . . . -0.3V to 7V (DC)

-0.3V to 9V (<10ns)

PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)

GND -8V (<20ns Pulse Width, 10

μJ) to 30V (<100ns)

UGATE Voltage . . . . . . . . . . . . . . . . VPHASE - 0.3V (DC) to VBOOT

VPHASE - 5V (<20ns Pulse Width, 10μJ) to VBOOT

LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V

GND - 2.5V (<20ns Pulse Width, 5

μJ) to VCC + 0.3V

Ambient Temperature Range . . . . . . . . . . . . . . . . . .-40°C to +125°C

HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV

Thermal Resistance (Typical)

θJA(°C/W) θJC(°C/W)

SOIC Package (Note 1) . . . . . . . . . . . .

90

N/A

QFN Package (Notes 2 and 3). . . . . . .

46

8.5

Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C

Maximum Storage Temperature Range . . . . . . . . . . -65°C to +150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C

(SOIC - Lead Tips Only)

Recommended Operating Conditions

Ambient Temperature Range. . . . . . . . . . . . . . . . . . . -40°C to +85°C

Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C

Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

±10%

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

+150°C max junction temperature is intended for short periods of time to prevent shortening the lifetime. Constantly operated at 150°C may shorten the life of the part.

NOTES:

1.

θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

2.

θ

JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.

3.

θJC, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.

Electrical Specifications

These specifications apply for TA = -40°C to +85°C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

SUPPLY CURRENT

Bias Supply Current

IVCC+PVCC PWM pin floating, VVCC = VPVCC = 5V

-

240

-

μA

FPWM = 300kHz, VVCC = VPVCC = 5V

-

1.6

-

mA

BOOTSTRAP DIODE

Forward Voltage

VF

Forward bias current = 2mA

TA = 0°C to +70°C

0.30

0.60

0.70

V

Forward bias current = 2mA

TA = -40°C to +85°C

0.30

0.60

0.75

V

POWER-ON RESET

POR Rising

-3.4

4.2

V

POR Falling

2.6

3.0

-

V

Hysteresis

-

400

-

mV

PWM INPUT

Sinking Impedance

RPWM_SNK

-4.6

-

k

Ω

Source Impedance

RPWM_SRC

-4.9

-

k

Ω

Tri-State Rising Threshold

VVCC = VPVCC = 5V (250mV Hysteresis)

1.00

1.20

1.40

V

Tri-State Falling Threshold

VVCC = VPVCC = 5V(300mV Hysteresis)

3.10

3.41

3.70

V

Tri-State Shutdown Holdoff Time

tTSSHD

-80-

ns

SWITCHING TIME (Note 4, See Figure 1)

UGATE Rise Time

tRU

3nF Load

-

8.0

-

ns

LGATE Rise Time

tRL

3nF Load

-

8.0

-

ns

UGATE Fall Time

tFU

3nF Load

-

8.0

-

ns

LGATE Fall Time

tFL

3nF Load

-

4.0

-

ns

UGATE Turn-Off Propagation Delay

tPDLU

Outputs Unloaded

-

18

-

ns

LGATE Turn-Off Propagation Delay

tPDLL

Outputs Unloaded

-

25

-

ns

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