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NE592 Datasheet(PDF) 4 Page - NXP Semiconductors |
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NE592 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors RF Communications Products Product specification NE592 Video amplifier April 15, 1992 253 DC ELECTRICAL CHARACTERISTICS DC Electrical CharacteristicsVSS=±6V, VCM=0, 0°C ≤TA≤70°C, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both standard and high gain parts unless noted differently. SYMBOL PARAMETER TEST CONDITIONS NE592 UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT AVOL Differential voltage gain, standard part Gain 11 RL=2kΩ, VOUT=3VP-P 250 600 V/V Gain 22, 4 80 120 V/V RIN Input resistance Gain 22, 4 8.0 k Ω IOS Input offset current 6.0 µA IBIAS Input bias current 40 µA VIN Input voltage range ±1.0 V CMRR Common-mode rejection ratio Gain 24 VCM±1V, f<100kHz 50 dB PSRR Supply voltage rejection ratio Gain 24 ∆VS=±0.5V 50 dB VOS Output offset voltage Gain 1 Gain 24 Gain 33 RL=∞ 1.5 1.5 1.0 V VOUT Output voltage swing differential RL=2kΩ 2.8 V ICC Power supply current RL=∞ 27 mA NOTES: 1. Gain select Pins G1A and G1B connected together. 2. Gain select Pins G2A and G2B connected together. 3. All gain select pins open. 4. Applies to 14-pin versions only. AC ELECTRICAL CHARACTERISTICS TA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both standard and high gain parts unless noted differently. SYMBOL PARAMETER TEST CONDITIONS NE/SA592 UNIT Min Typ Max BW Bandwidth Gain 11 Gain 22, 4 40 90 MHz MHz tR Rise time Gain 11 Gain 22, 4 VOUT=1VP-P 10.5 4.5 12 ns ns tPD Propagation delay Gain 11 Gain 22, 4 VOUT=1VP-P 7.5 6.0 10 ns ns NOTES: 1. Gain select Pins G1A and G1B connected together. 2. Gain select Pins G2A and G2B connected together. 3. All gain select pins open. 4. Applies to 14-pin versions only. |
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