November 2006 - Rev 21-Nov-06

17.0-25.0 GHz GaAsTransmitter

QFN, 7x7mm

U1002-QD

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2006 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

Page 5 of 7

Typical Application

Mimix Broadband MMIC-based 19.0-26.0 GHz Transmitter Block Diagram

(Changing LO and IF frequencies as required allows design to operate as high as 26 GHz)

IF IN

2 GHz

XB1004

XP1013

XU1002-QD

Sideband

Reject

RF Out

17.7-23.6 GHz

LO(+2.0dBm)

7.85-10.8 GHz (USB Operation)

9.85-10.85 GHz (LSB Operation)

Mimix Broadband's 17.0-25.0 GHz XU1002-QD GaAs MMIC Transmitter can be used in saturated radio applications and

linear modulation schemes up to 16 QAM. The transmitter can be used in upper and lower sideband applications from

19.0-26.0 GHz.

MTTFTables

Bias Conditions: Vd1=4.0V, Vd2=4.0V, Id1=230 mA, Id2=116 mA

MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.

App Note [1] Biasing - This device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=230mA and Vd2=4.0V,

Id2=116mA. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives

the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may

be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the

current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed

to do this is -0.1V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the

applied voltage to ensure negative gate bias is available before applying the positive drain supply.

MTTF vs. Backplate Temperature

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

1.0E+06

1.0E+07

1.0E+08

1.0E+09

20

30

40

50

60

70

80

90

100

110

Temperature (degrees)