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NE556 Datasheet(PDF) 3 Page - NXP Semiconductors |
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NE556 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 5 page ![]() Philips Semiconductors Linear Products Product specification NE/SA/SE556/NE556-1 Dual timer August 31, 1994 355 ELECTRICAL CHARACTERISTICS TA=25°C, VCC=+5V to +15V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE556 NE/SA556 NE556-1 UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT VCC Supply voltage 4.5 18 4.5 16 V VCC=5V, RL=∞ 6 10 6 12 mA ICC Supply current (low state)1 VCC=15V, RL=∞ 20 24 20 30 mA Timing error (monostable) RA=2kΩ to 100kΩ tM Initial accuracy2 C=0.1 µF 0.5 2.0 0.75 3.0 % ∆tM/∆T Drift with temperature T=1.1 RC 30 100 50 150 ppm/ °C ∆tM/∆VS Drift with supply voltage 0.05 0.2 0.1 0.5 %/V Timing error (astable) RA, RB=1kΩ to 100kΩ tA Initial accuracy2 C=0. µF 4 6 5 13 % ∆tA/∆T Drift with temperature VCC=15V 400 500 400 500 ppm/ °C ∆tA/∆VS Drift with supply voltage 0.15 0.6 0.3 1 %/V VC Control voltage level VCC=15V 9.6 10.0 10.4 9.0 10.0 11.0 V VC Control voltage level VCC=5V 2.9 3.33 3.8 2.6 3.33 4.0 V Threshold voltage VCC=15V 9.4 10.0 10.6 8.8 10.0 11.2 V VTH VCC=5V 2.7 3.33 4.0 2.4 3.33 4.2 V ITH Threshold current3 VCC = 15V, VTH = 10.5V 30 250 30 250 nA Trigger voltage VCC=15V 4.8 5.0 5.2 4.5 5.0 5.6 V VTRIG VCC=5V 1.45 1.67 1.9 1.1 1.67 2.2 V ITRIG Trigger current VTRIG=0V 0.5 0.9 0.5 2.0 µA VRESET Reset voltage5 0.4 0.7 1.0 0.4 0.7 1.0 V Reset current VRESET=0.4V 0.4 0.1 0.4 0.4 0.1 0.6 mA IRESET Reset current VRESET=0V 0.4 1.0 0.4 1.5 mA VOL Output voltage (low) VCC=15V V VOL Output voltage (low) ISINK=10mA 0.1 0.15 0.1 0.25 V VOL ISINK=50mA 0.4 0.5 0.4 0.75 V VOL SE556 2.0 2.25 V VOL NE/SA556 ISINK=100mA 2.0 3.2 VOL NE556-1 2.0 2.5 Output voltage (low) ISINK=200mA 2.5 2.5 V VCC=5V V ISINK=8mA 0.1 0.2 0.25 0.3 V ISINK=5mA 0.05 0.15 0.15 0.25 VCC=15V V ISOURCE=200mA 12.5 12.5 V VOH Output voltage (high) ISOURCE=100mA 13.0 13.3 12.75 13.3 V VCC=5V ISOURCE=100mA 3.0 3.3 2.75 3.3 tOFF Turn-off time6 NE556-1 VRESET=VCC 0.5 2.0 0.5 µs tR Rise time of output 100 200 100 300 ns tF Fall time of output 100 200 100 300 ns Discharge leakage current 20 100 20 100 nA |
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