Page 5 of 6

App Note [1] Biasing – As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain

bias. Bias is nominally Vd=5V, Id=190 mA.

App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.

Additional DC bypass capacitance (~0.01 uF) is also recommended.

MTTF Graphs

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

10.0-40.0 GHz GaAs MMIC

Distributed Amplifier

D1005-BD

XD1005-BD Vd=5.0 V Id=175 mA

1.00E+05

1.00E+06

1.00E+07

1.00E+08

1.00E+09

55

65

75

85

95

105

115

125

Backplate Temperature (deg C)

XD1005-BD Vd=5.0 V Id=175 mA

1.00E+00

1.00E+01

1.00E+02

1.00E+03

1.00E+04

55

65

75

85

95

105

115

125

Backplate Temperature (deg C)

XD1005-BD Vd=5.0 V Id=175 mA

60

61

62

63

64

65

66

67

68

69

70

71

72

73

74

75

76

55

65

75

85

95

105

115

125

Backplate Temperature (deg C)

XD1005-BD Vd=5.0 V Id=175 mA

100

110

120

130

140

150

160

170

180

190

200

55

65

75

85

95

105

115

125

Backplate Temperature (deg C)

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

January 2007 - Rev 16-Jan-07