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CMM0014-BD Datasheet(PDF) 1 Page - Mimix Broadband |
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CMM0014-BD Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 3 page 2.0-22.0 GHz GaAs MMIC Power Amplifier Page 1 of 3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. CMM0014-BD August 2006 - Rev 02-Aug-06 2.0 to 22.0 GHz GaAs MMIC Power Amplifier Advanced Product Information August 2004 (1 of 3) Features Small Size: 45 x 92 mils High Gain: 11.5 dB, Nom Medium Power: +25 dBm, Typ P1dB @14 GHz Directly Cascadable – Fully Matched Unconditionally Stable Single Bias Operation Bias Control pHEMT Technology Silicon Nitride Passivation Specifications (TA = 25°C, Vdd = 8V)1 x a M p y T n i M s t i n U s r e t e m a r a P 0 . 2 2 0 . 2 z H G e g n a R y c n e u q e r F 5 . 3 1 0 . 0 1 B d n i a G l a n g i S ll a m S 8 . 0 B d ± s s e n t a l F n i a G 5 3 . 0 B d ± ) C ° 5 8 + o t C ° 0 4 - ( n o i t a i r a V n i a G 0 . 0 1 - B d s s o L n r u t e R t u p n I 0 . 9 - B d s s o L n r u t e R t u p t u O Power Output (@1 dB Gain Compression) 1 dBm 22.5 5 . 4 m B d ) y c n e u q e r f g n i t a r e p o r e v o ( n o i t a i r a V B d 1 P 5 2 . 0 m B d ± ) C ° 5 8 + o t C ° 0 4 - ( n o i t a i r a V B d 1 P 0 . 9 2 0 . 4 2 m B d r e w o P t u p t u O d e t a r u t a S 0 . 8 4 m B d z H G 0 1 @ t n i o P t p e c r e t n I r e d r O d n o c e S 5 . 7 3 m B d z H G 0 1 @ t n i o P t p e c r e t n I r e d r O d r i h T 5 . 7 B d e r u g i F e s i o N 0 4 3 5 9 2 0 5 2 A m t n e r r u C 0 . 3 3 W / C ° e c n a t s i s e R l a m r e h T Stability 2 Unconditionally Stable Absolute Maximum Ratings g n i t a R r e t e m a r a P ) . x a m ( V 9 / ) . n i m ( V 7 e g a t l o V n i a r D A m 0 5 3 t n e r r u C n i a r D Continuous Power Dissipation 2.8 W m B d 0 2 + r e w o P t u p n I Storage Temperature -50°C to +150°C Channel Temperature +175°C Operating Backside Temperature -40 to (see note 2)°C Die Attach and Bonding Procedures Die Attach: Eutectic die attach is recommended. For eutec- tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or less. Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre- stressed); Thermocompression bonding is preferred over thermosonic bonding. For thermocompression bonding: Stage Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding Tip Pressure: 18 to 40 gms depending on size of wire. Chip Diagram Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 3). 2. Stability factor measured on-wafer. Notes: 1. Operation outside these limits can cause permanent damage. 2. Calculation maximum operating temperature: Tmax = 175–(Pdis [W] x 33.0) [°C]. |
Similar Part No. - CMM0014-BD_06 |
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Similar Description - CMM0014-BD_06 |
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