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CHV2707-QJ Datasheet(PDF) 1 Page - Mimix Broadband

Part No. CHV2707-QJ
Description  700 to 800 MHz InGaP HBT 5W Linear Power Amplifier
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Maker  MIMIX [Mimix Broadband]
Homepage  http://www.mimixbroadband.com
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CHV2707-QJ Datasheet(HTML) 1 Page - Mimix Broadband

   
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CHV2707-QJ
700 to 800 MHz InGaP HBT
5W Linear Power Amplifier
October 2006 - Rev 25-Oct-06
Internal Pre-matching
Single Supply Operation, 12V
Power Gain 14 dB
ESD Protection On Board
Current Control for Multiple Applications
2.5% EVM @ 30 dBm Avg Power, 802.16 OFDM
Signal Format, PAR = 9 dB
Low Thermal Resistance
Ideal for WiMAX Applications
RoHS Compliant 6x6 mm QFN Package
Features
General Description
The CHV2707 internally pre-matched power HBT device
provides 14 dB of gain, 2.3% EVM at 30dBm output power for
802.16 OFDM signal with a peak to average power ratio of 9
dB. The device operates off a single supply voltage up to 12V
and includes internal bias circuitry to enable exact setting of
the quiescent current using an external Vcontrol. This Vcontrol
is non-unique voltage setting and the same value can be used
for each part depending on the required Icq. The device is
ideal for high linearity, high data rate applications such as
WiMAX. Internal pre-matching facilitates a simplified external
matching approach and the highest in-band gain potential of
the device. The device operates with unique matching at each
of the popular WiMAX bands with the inherent repeatability of
an InGaP HBT process.
Absolute Maximum Ratings
Voltage Supply (Vcc)
Current (Icc)
Dissipated Power (Pdiss)
Input Power (Pin)
Storage Temperature (Tstg)
Channel Temperature (Tch)
Thermal Resistance (Rth)
Operating Backside Temperature (Tb)
4.5 (min) to 12 V (max)
2000 mA
18W
18 dBm
-60 to +150 ºC
175 ºC
5 ºC/W
-40 ºC to (see note 1)
Operation outside any of these limits can cause permanent damage.
(1) Caclulate maximum operating temperature Tmax using the
following formula: Tmax=175-(Pdiss [W] x 5) [C].
Electrical Characteristics (AmbientTemperatureT = 25 oC,Vcc = 12V)1
Parameter
Operating Frequency (f )
Quiescent Current (Icq)2
Power Gain @ Pout = 29 dBm (Gps)
Current @ 29 dBm (Icc)
Output Power @ EVM = 2.5% (Pout)3
Adjacent Channel Power Ratio @ Pout = 30 dBm (ACPR)4
Input Reflection Coefficient (S11)
Noise Figure (NF)
Units
MHz
mA
dB
mA
dBm
dBc
dB
dB
Min.
700
-
-
-
29
-
Typ.
750
730
14
770
-
-45
-9
5
Max.
800
760
-
800
-
-
1. Data measured in a Mimix matched connectorized fixture.
2. Quiescent current depends on Vcc and measured @ Pout = 30 dBm
3. Using an 802.1 6d OFDM signal format with PAR=9 dB
4. Using 3 GPP WCDMA signal, PAR = 9.17 dB


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