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BAY73 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BAY73 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BAY73 Rev. B January 2005 BAY73 Small Signal Diode Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Electrical Characteristics T C = 25°C unless otherwise noted Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 125 V IF(AV) Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature 175 °C Symbol Parameter Value Unit PD Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W Symbol Parameter Conditions Min. Max Units VR Breakdown Voltage IR = 100µA 125 V VF Forward Voltage IF = 1mA IF = 5mA IF = 10mA IF = 50mA IF = 100mA IF = 200mA 0.60 0.67 0.69 0.78 0.81 0.85 0.68 0.75 0.80 0.88 0.94 1.0 V V V V V V IR Reverse Leakage VR = 100V VR = 100V, TA = 125°C VR = 20V, TA = 125°C 5 1 500 nA µA nA CT Total Capacitance VR = 0, f = 1.0MHz 8 pF trr Reverse Recovery Time IF = IR = 30mA, Irr = 3mA, RL = 100Ω 1.0 µs DO-35 Color Band Denotes Cathode |
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