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BAV70 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BAV70 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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©2004 Fairchild Semiconductor Corporation BAV70 / 74, Rev. D1 Small Signal Diode Absolute Maximum Ratings * T A = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Electrical Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage BAV70 BAV74 70 50 V V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 2.0 A A TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C Symbol Parameter Value Units PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Test Conditions Min. Max. Units VR Breakdown Voltage BAV70 BAV74 IR = 100µA IR = 5.0µA 75 50 V V VF Forward Voltage BAV70 BAV74 IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA IF = 100mA 715 855 1.0 1.25 1.0 mV mV V V V IR Reverse Leakage BAV70 BAV74 VR = 25V, TA = 150°C VR = 70V VR = 70V, TA = 150°C VR = 50V VR = 50V, TA = 150°C 60 5.0 100 100 100 µA µA µA nA µA CT Total Capacitance BAV70 BAV74 VR = 0V, f = 1.0MHz VR = 0V, f = 1.0MHz 1.5 2.0 pF pF trr Reverse Recovery Time BAV70 BAV74 IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω 6.0 4.0 ns ns BAV70 / 74 Connection Diagram 12 3 A4 1 2 3 SOT-23 3 1 2 BAV70 A4 BAV74 JA MARKING |
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