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BAV19 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BAV19 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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BAV19/20/21, Rev. C BAV19 / 20 / 21 Small Signal Diode Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics DO-35 Color Band Denotes Cathode 2001 Fairchild Semiconductor Corporation Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage BAV19 BAV20 BAV21 120 200 250 V V V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A T stg Storage Temperature Range -65 to +200 °C T J Operating Junction Temperature 175 °C Symbol Parameter Value Units P D Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W Symbol Parameter Test Conditions Min Max Units VR Breakdown Voltage BAV19 BAV20 BAV21 IR = 100 µA I R = 100 µA IR = 100 µA 120 200 250 V V V VF Forward Voltage IF = 100 mA IF = 200 mA 1.0 1.25 V V IR Reverse Current BAV19 BAV20 BAV21 VR = 100 V V R = 100 V, TA = 150°C VR = 150 V V R = 150 V, TA = 150°C VR = 200 V V R = 200 V, TA = 150°C 100 100 100 100 100 100 nA µA nA µA nA µA CT Total Capacitance VR = 0, f = 1.0 MHz 5.0 pF t rr Reverse Recovery Time I F = IR = 30 mA, IRR = 3.0 mA, RL = 100Ω 50 ns |
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