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HIP6311 Datasheet(PDF) 16 Page - Intersil Corporation |
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HIP6311 Datasheet(HTML) 16 Page - Intersil Corporation |
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16 / 17 page  16 FN4817.3 December 27, 2004 dissipated by the Driver IC and don't heat the MOSFETs. However, large gate-charge increases the switching time, tSW which increases the upper MOSFET switching losses. Ensure that both MOSFETs are within their maximum junction temperature at high ambient temperature by calculating the temperature rise according to package thermal-resistance specifications. A separate heatsink may be necessary depending upon MOSFET power, package type, ambient temperature and air flow. A diode, anode to ground, may be placed across Q2 and Q4. These diodes function as a clamp that catches the negative inductor swing during the dead time between the turn off of the lower MOSFETs and the turn on of the upper MOSFETs. The diodes must be a Schottky type to prevent the lossy parasitic MOSFET body diode from conducting. It is usually acceptable to omit the diodes and let the body diodes of the lower MOSFETs clamp the negative inductor swing, but efficiency could drop one or two percent as a result. The diode's rated reverse breakdown voltage must be greater than the maximum input voltage. PUPPER IO 2 rDS ON () × VOUT × VIN ------------------------------------------------------------ IO VIN × tSW × FSW × 2 ---------------------------------------------------------- + = PLOWER IO 2 rDS ON () × VIN VOUT – () × VIN --------------------------------------------------------------------------------- = HIP6311 |
Similar Part No. - HIP6311_04 |
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Similar Description - HIP6311_04 |
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