MBM29LV008TA-90PTN datasheet(26/51 Pages) SPANSION | FLASH MEMORY CMOS 8M (1M X 8) BIT

Part No.	MBM29LV008TA-90PTN

Description	FLASH MEMORY CMOS 8M (1M X 8) BIT

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MBM29LV008TA/BA-70/90

25

s

s DC CHARACTERISTICS

*1 : The ICC current listed includes both the DC operating current and the frequency dependent component.

*2 : ICC active while Embedded Algorithm (program or erase) is in progress.

*3 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.

*4 : (VID – VCC) do not exceed 9 V.

Parameter

Symbol

Test Conditions

Value

Unit

Min

Max

Input Leakage Current

ILI

VIN = VSS to VCC, VCC = VCC Max

–1.0

+1.0

µA

Output Leakage Current

ILO

VOUT = VSS to VCC, VCC = VCC Max

–1.0

+1.0

µA

A9, OE, RESET Inputs Leakage

Current

ILIT

VCC = VCC Max,

A9, OE, RESET = 12.5 V

—35

µA

VCC Active Current *1

ICC1

CE = VIL, OE = VIH, f=10 MHz

—

22

mA

CE = VIL, OE = VIH, f=5 MHz

—

12

mA

VCC Active Current *2

ICC2

CE = VIL, OE = VIH

—35

mA

VCC Current (Standby)

ICC3

VCC = VCC Max, CE = VCC ± 0.3 V,

RESET = VCC ± 0.3 V

—5

µA

VCC Current (Standby, Reset)

ICC4

VCC = VCC Max,

RESET = VSS ± 0.3 V

—5

µA

VCC Current

(Automatic Sleep Mode) *3

ICC5

VCC = VCC Max, CE = VSS ± 0.3 V,

RESET = VCC ± 0.3 V

VIN = VCC ± 0.3 V or VSS

± 0.3 V

—5

µA

Input Low Level

VIL

—–0.5

0.6

V

Input High Level

VIH

—2.0

VCC + 0.3

V

Voltage for Autoselect, Sector

Protection,and Temporary Sector

Unprotection

(A9, OE, RESET)*4

VID

—

11.5

12.5

V

Output Low Voltage Level

VOL

IOL = 4.0 mA, VCC = VCC Min

—

0.45

V

Output High Voltage Level

VOH1

IOH = –2.0 mA, VCC = VCC Min

2.4

—

V

VOH2

IOH = –100

µAVCC – 0.4

—

V

Low VCC Lock-Out Voltage

VLKO

—2.3

2.5

V

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MBM29LV008TA-90PTN Datasheet(PDF) 26 Page - SPANSION

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