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AM29SL400D Datasheet(PDF) 20 Page - Advanced Micro Devices

Part No. AM29SL400D
Description  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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Maker  AMD [Advanced Micro Devices]
Homepage  http://www.amd.com
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AM29SL400D Datasheet(HTML) 20 Page - Advanced Micro Devices

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18
Am29SL400D
Rev. A Amend. +1 April 13, 2005
ADV ANCE
I N FO RMAT I O N
Write Operation Status
The device provides several bits to determine the status
of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and
RY/BY#. Table 6 on page 21 and the following subsec-
tions describe the functions of these bits. DQ7, RY/BY#,
and DQ6 each offer a method for determining whether
a program or erase operation is complete or in progress.
These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Algorithm is in progress or com-
pleted, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE # pu ls e in t h e pro g ra m or erase c o mm a n d
sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to pro-
gramming during Erase Suspend. When the Embedded
Program algorithm is complete, the device outputs the
datum programmed to DQ7. The system must provide
the program address to read valid status information on
DQ7. If a program address falls within a protected
sector, Data# Polling on DQ7 is active for approximately
1 µs, then the device returns to reading array data.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or “0.”
The system must provide an address within any of the
sectors selected for erasure to read valid status infor-
mation on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 µs, then
the device returns to reading array data. If not all
selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores
the selected sectors that are protected.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ7–DQ0 on the
following read cycles. This is because
DQ7 may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. Figure 19, on
page 32, Data# Polling Timings (During Embedded
Algorithms), illustrates this.
Table 6 on page 21 shows the outputs for Data# Polling
on DQ7. Figure 5 shows the Data# Polling algorithm.
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output,
several RY/BY# pins can be tied together in parallel with
a pull-up resistor to VCC.
DQ7 = Data?
Yes
No
No
DQ5 = 1?
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 5.
Data# Polling Algorithm


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