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AM70PDL127BDH Datasheet(PDF) 4 Page - SPANSION

Part No. AM70PDL127BDH
Description  2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
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Maker  SPANSION [SPANSION]
Homepage  http://www.spansion.com
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AM70PDL127BDH Datasheet(HTML) 4 Page - SPANSION

 
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Am70PDL127BDH/Am70PDL129BDH
November 25, 2003
AD VAN C E
INFORM ATION
FLASH MEMORY FEATURES (DATA STORAGE)
AM29LV640M ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 V for read, erase, and program operations
■ VersatileI/O
™ control
— Device generates data output voltages and tolerates
data input voltages on the DQ inputs/outputs as
determined by the voltage on the VIO pin; operates
from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBit process
technology
■ SecSi
™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■ Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125
°C
PERFORMANCE CHARACTERISTICS
■ High performance
— 110 ns access time
— 30 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
time: 16-word write buffer reduces overall
programming time for multiple-word updates
— 4-word page read buffer
— 16-word write buffer
■ Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects first or last sector
regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
pSRAM Features
■ Power dissipation
— Operating: 40 mA maximum
— Standby: 70 µA maximum
— Deep power-down standby: 5 µA
■ CE1s# and CE2ps Chip Select
■ Power down features using CE1s# and CE2ps
■ Data retention supply voltage: 2.7 to 3.3 volt
■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
■ 8-word page mode access


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