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2N5307 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. 2N5307
Description  NPN General Purpose Amplifier
Download  4 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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2N5307 Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse
≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
BV(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 10mA, IB = 0
40
V
BV(BR)CBO
Collector-Base Breakdown Voltage
IC = 0.1µA, IE = 0
40
V
BV(BR)EBO
Emitter-Base Breakdown Voltage
IE = 0.1µA, IC = 0
12
V
ICBO
Collector Cut-off Current
VCB = 40V, IE = 0
VCB = 40V, IE = 0, TA = 100°C
0.1
20
µA
µA
IEBO
Reverse Base Current
VEB = 12V, IC = 0
0.1
µA
On Characteristics *
hFE
DC Current Gain
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 100mA
2,000
6,000
20,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 200mA, IB = 0.2mA
1.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 200mA, IB = 0.2mA
1.6
V
VBE(on)
Base-Emitter On Voltage
IC = 200mA,VCE = 5.0V
1.5
V
Small Signal Characteristics
Cob
Output Capacitance
VCB = 10V, f = 1.0MHz
10
pF
hfe
Small-Signal Current Gain
IC = 2.0mA, VCE = 5.0V,
f = 1.0kHz
IC = 2.0mA, VCE = 5.0V,
f = 10MHz
2,000
6.0
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W


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