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2N5307 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. 2N5307
Description  NPN General Purpose Amplifier
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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2N5307 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current
- Continuous
1.2
A
TJ, TST
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
2N5307
NPN General Purpose Amplifier
• This device designed for applications requiring extremely high current
gain at currents to 1.0A.
• Sourced from Process 05.
• See MPSA14 for characteristics.
TO-92
1. Emitter 2. Collector 3. Base
1


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