S323GB70UI datasheet(2/52 Pages) SPANSION

Part #	S323GB70UI

Description	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory

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Manufacturer	SPANSION [SPANSION]

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ADVANCE INFORMATION

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 26493

Rev: A

Issue Date: May 15, 2002

Refer to AMD’s Website (www.amd.com) for the latest information.

Am29DS32xG

32 Megabit (4 M x 8-Bit/2 M x 16-Bit)

CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in other bank

— Zero latency between read and write operations

■ Multiple bank architectures

— Three devices available with different bank sizes

(refer to Table 3)

■ 256-byte SecSi

 (Secured Silicon) Sector

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

— Customer lockable: One time programmable. Once

locked, data cannot be changed.

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

■ Package options

— 48-ball FBGA

— 48-pin TSOP

■ Top or bottom boot block

■ Manufactured on 0.17 µm process technology

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash standard

PERFORMANCE CHARACTERISTICS

■ High performance

— Access time as fast 60 ns

— Program time: 4 µs/word typical utilizing Accelerate

function

■ Ultra low power consumption (typical values)

— 1 mA active read current at 1 MHz

— 5 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

■ Minimum 1 million write cycles guaranteed per sector

■ 20 year data retention at 125°C

— Reliable operation for the life of the system

SOFTWARE FEATURES

■ Data Management Software (DMS)

— AMD-supplied software manages data programming,

enabling EEPROM emulation

— Eases historical sector erase flash limitations

■ Supports Common Flash Memory Interface (CFI)

■ Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

HARDWARE FEATURES

■ Any combination of sectors can be erased

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to the read mode

■ WP#/ACC input pin

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect

status

— Acceleration (ACC) function accelerates program

timing

■ Sector protection

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

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SPANSION	AM29DS320G	711Kb / 54P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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SPANSION	AM29DL32XG	1Mb / 58P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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