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LM10 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM10
Description  Operational Amplifier and Voltage Reference
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LM10 Datasheet(HTML) 3 Page - National Semiconductor (TI)

 
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Electrical Characteristics (Continued)
T
J=25˚C, TMIN
≤T
J
≤T
MAX (Boldface type refers to limits over temperature range) (Note 5)
Parameter
Conditions
LM10/LM10B
LM10C
Units
Min
Typ
Max
Min
Typ
Max
Line regulation
1.2V (1.3V)
≤V
S
≤40V
0.001
0.003
0.001
0.008
%/V
0
≤I
REF
≤1.0 mA, V
REF=200 mV
0.006
0.01
%/V
Load regulation
0
≤I
REF
≤1.0 mA
0.01
0.1
0.01
0.15
%
V
+−V
REF
≥1.0V (1.1V)
0.15
0.2
%
Amplifier gain
0.2V
≤V
REF
≤35V
50
75
25
70
V/mV
23
15
V/mV
Feedback sense
195
200
205
190
200
210
mV
voltage
194
206
189
211
mV
Feedback current
20
50
22
75
nA
65
90
nA
Reference drift
0.002
0.003
%/˚C
Supply current
270
400
300
500
µA
500
570
µA
Supply current
change
1.2V (1.3V)
≤V
S
≤40V
15
75
15
75
µA
Electrical Characteristics
T
J=25˚C, TMIN
≤T
J
≤T
MAX (Boldface type refers to limits over temperature range) (Note 5)
Parameter
Conditions
LM10BL
LM10CL
Units
Min
Typ
Max
Min
Typ
Max
Input offset voltage
0.3
2.0
0.5
4.0
mV
3.0
5.0
mV
Input offset current
0.1
0.7
0.2
2.0
nA
(Note 6)
1.5
3.0
nA
Input bias current
10
20
12
30
nA
30
40
nA
Input resistance
250
500
150
400
k
150
115
k
Large signal voltage
V
S=±3.25V, IOUT=0
60
300
40
300
V/mV
gain
V
OUT=±3.2V
40
25
V/mV
V
S=±3.25V, IOUT=10 mA
10
25
5
25
V/mV
V
OUT=±2.75 V
43
V/mV
V
S=±0.6V (0.65V), IOUT=±2 mA
1.5
3.0
1.0
3.0
V/mV
V
OUT=±0.4V (±0.3V), VCM=−0.4V
0.5
0.75
V/mV
Shunt gain (Note 7)
1.5V
≤V+≤6.5V, R
L=500
8
30
6
30
V/mV
0.1 mA
≤I
OUT
≤10 mA
44
V/mV
Common-mode
−3.25V
≤V
CM
≤2.4V (2.25V)
89
102
80
102
dB
rejection
V
S=±3.25V
83
74
dB
Supply-voltage
−0.2V
≥V≥−5.4V
86
96
80
96
dB
rejection
V
+=1.0V (1.2V)
80
74
dB
1.0V (1.1V)
≤V+≤6.3V
94
106
80
106
dB
V
=0.2V
88
74
dB
Offset voltage drift
2.0
5.0
µV/˚C
Offset current drift
2.0
5.0
pA/˚C
Bias current drift
60
90
pA/˚C
Line regulation
1.2V (1.3V)
≤V
S
≤6.5V
0.001
0.01
0.001
0.02
%/V
0
≤I
REF
≤0.5 mA, V
REF=200 mV
0.02
0.03
%/V
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