AM41PDS3224DB10IS datasheet(34/59 Pages) AMD

Part #	AM41PDS3224DB10IS

Description	32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM

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Manufacturer	AMD [Advanced Micro Devices]

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34 / 59 page

May 13, 2002

Am41PDS3224D

33

P R E L IMINARY

Notes:

1.

The I

CC current listed is typically less than 2 mA/MHz, with OE# at VIH.

2.

Maximum I

CC specifications are tested with VCC = VCCmax.

3.

I

CC active while Embedded Erase or Embedded Program is in progress.

4.

Automatic sleep mode enables the low power mode when addresses remain stable for t

ACC + 30 ns. Typical sleep mode current is 200 nA.

5.

Not 100% tested.

FLASH DC CHARACTERISTICS

CMOS Compatible

Parameter

Symbol

Parameter Description

Test Conditions

Min

Typ

Max

Unit

I

LI

Input Load Current

V

IN = VSS to VCC, VCC = VCC max

±1.0

µA

I

LIT

RESET# Input Load Current

V

CC = VCC max; RESET# = 12.5 V

35

µA

I

LO

Output Leakage Current

V

OUT = VSS to VCC, VCC = VCC max

±1.0

µA

I

LIA

ACC Input Leakage Current

V

CC = VCC max, WP#/ACC = VACC max

35

µA

I

CC1f

Flash V

CC Active Inter-Page Read Current

(Notes 1, 2)

CE#f = V

IL, OE# = VIH,

1 MHz

2.5

3

mA

10 MHz

24

28

I

CC2fFlash VCC Active Write Current (Notes 2, 3)

CE#f = V

IL, OE# = VIH

15

30

mA

I

CC3fFlash VCC Standby Current (Note 2)

V

CCf = VCC max, CE#f,

RESET# = V

CC ± 0.3 V

0.2

5

µA

I

CC4fFlash VCC Reset Current (Note 2)

V

CCf = VCC max, WP#/ACC = VCCf ± 0.3 V,

RESET# = V

SS ± 0.3 V

0.1

5

µA

I

CC5f

Flash V

CC Automatic Sleep Mode Current

(Notes 2, 4)

V

CCf = VCC max, CE#f = VSS ± 0.3 V;

RESET# = V

CC ± 0.3 V,

V

IN = VCC ± 0.3 V or VSS ± 0.3 V

0.2

5

µA

I

CC6f

Flash V

CC Active Read-While-Program

Current (Notes 1, 2, 5)

CE#f = V

IL, OE# = VIH

30

55

mA

I

CC7f

Flash V

CC Active Read-While-Erase Current

(Notes 1, 2, 5)

CE#f = V

IL, OE# = VIH

30

55

mA

I

CC8f

Flash V

CC Active

Program-While-Erase-Suspended Current

(Note 2)

CE#f = V

IL, OE# = VIH

17

35

mA

I

CC9fFlash VCC Active Intra-Page Read Current

CE#f = V

IL, OE# = VIH

10 MHz

0.5

1

mA

20 MHz

1

2

I

ACC

WP#/ACC Accelerated Program Current

V

CC = VCCMax, WP#/ACC = VACCMax

12

20

mA

V

IL

Input Low Voltage

–0.5

0.2 x V

CC

V

IH

Input High Voltage

0.8 x V

CC

V

CC + 0.3

V

ACC/VHH

Voltage for WP#/ACC Program Acceleration

and Sector Protection/Unprotection

8.5

9.5

V

ID

Voltage for Sector Protection, Autoselect and

Temporary Sector Unprotect

911

V

OL

Output Low Voltage

I

OL = 4.0 mA, VCCf = VCCs = VCC min

0.1

V

OH1

Output High Voltage

I

OH = –2.0 mA, VCCf = VCCs = VCC min

0.85 x V

CC

V

OH2

I

OH = –100 µA, VCC = VCC min

V

CC–0.1

V

LKO

Flash Low V

CC Lock-Out Voltage (Note 5)

1.2

1.5

V

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AM41PDS3224DB10IS Datasheet(PDF) 34 Page - Advanced Micro Devices

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