DMN2004WK datasheet(3/4 Pages) DIODES

Part #	DMN2004WK

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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3 / 4 page

DS30934 Rev. 2 - 2

3 of 4

DMN2004WK

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I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

D

0.1

1

V= 5V

Pulsed

GS

T = 150 C

A

°

T= -55 C

A

°

T= -25 C

A

°

T= 0 C

A

°

T= 25 C

A

°

T = 125 C

A

°

T= 85 C

A

°

0.2

0.4

0.6

0.8

1.0

6

0.2

0.1

0

0.6

0.5

0.4

0.3

0.7

1.0

0.9

0.8

0

V

, GATE-SOURCE

Fig. 6 Static Drain-Source, On-Resistance

vs. Gate-Source Voltage

GS

VOLTAGE (V)

4

2

T = 25°C

A

I = 540mA

D

I , DRAIN CURRENT (A)

Fig. 7

D

On-Resistance vs. Drain

Current and Gate Voltage

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0

0.2

0.4

0.6

0.8

11.2

V= 1.8V

GS

V

= 4.5V

GS

V

= 2.5V

GS

T= 25°C

j

T , JUNCTION TEMPERATURE ( C)

Fig. 8

j

°

Static Drain-Source, On-Resistance

vs. Temperature

-50

-25

0

25

50

75

100

125 150

0

0.2

0.3

0.5

0.1

0.4

V

= 10V,

GS

I = 280mA

D

V= 4.5V,

GS

I = 540mA

D

V,

Fig. 9 Drain Source Leakage Current

vs. Voltage

DS DRAIN-SOURCE VOLTAGE (V)

0.1

1

10

100

1000

10000

2

4

6

8

10

12

14

16

18

20

T = 100°C

j

T = 150°C

j

0.001

0.01

0.1

0.5

0

1

V

,

SOURCE

Fig. 10 Reverse Drain Current

vs. Source-Drain Voltage

SD DRAIN-

VOLTAGE (V)

V= 0V

GS

T= -55 C

A

°

T= 150 C

A

°

T= -25 C

A

°

T= 0 C

A

°

T= 25 C

A

°

T= 85 C

A

°

T= 125 C

A

°

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