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LVT22V10B7A Datasheet(PDF) 5 Page - NXP Semiconductors |
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LVT22V10B7A Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 20 page Philips Semiconductors Product specification LVT22V10 3V high speed, universal PLD device 1998 Feb 10 5 DC ELECTRICAL CHARACTERISTICS Over operating ranges. SYMBOL PARAMETER TEST CONDITIONS1 LIMITS UNIT SYMBOL PARAMETER TEST CONDITIONS1 MIN MAX UNIT Input voltage VIL Low VCC = MIN 0.8 V VIH High VCC = MAX 2.0 V VI Clamp VCC = MIN, IIN = –18mA –1.2 V Output voltage VCC = MIN to MAX, VI = VIH or VIL IOH = –100 µA VCC–0.2 V VOH High-level output voltage VCC = MIN V =V or V IOH = –16mA 2.0 V VCC = MIN, VI = VIH or VIL IOH = –5.5 mA 2.4 V VCC = MIN to MAX, VI = VIH or VIL IOL = 100µA 0.2 V VOL Low-level output voltage VCC = MIN V =V or V IOL = 32 mA 0.5 V VCC = MIN, VI = VIH or VIL IOL = 16 mA 0.4 V Input current IIL Low VCC = MAX, VIN = 0.0V –10 µA IIH High VCC = MAX, VIN = VCC 10 µA II Max input current VCC = MAX, VIN = 5.5V 10 µA II Pin 1 (program) VCC = MAX, VIN = 5.5V 20 µA IBHL Bus hold low sustaining current2 VCC = 3V, VI = 0.8V 75 µA IBHH Bus hold high sustaining current3 VCC = 3V, VI = 2V –75 µA IBHLO Bus hold low overdrive current4, 9 VCC = 3.6V 500 µA IBHHO Bus hold high overdrive current5, 9 VCC = 3.6V –500 µA Output current IOFF Output off current VCC = 0V, VI or VO = 0 to 4.5V ±10 µA IEX Current into an output in high state when VO > VCC VO = 5.5V, VCC = 3.0V ±100 µA IPU/PD Power-up/down 3-State output current8 VCC <1.2V; VO = 0.5V to VCC; VI = GND or VCC; OE/OE = X 100 µA VCC = MAX IOZH Output leakage6 VIN = VIL or VIH, VOUT = 5.5V 10 µA IOZL Output leakage6 VIN = VIL or VIH, VOUT =0V –10 µA ISC Short circuit7 VOUT = 0.5V –30 –220 mA ICC VCC supply current VCC = 3.6V, Outputs enabled, VI = VCC or GND; IO = 0 170 mA Ground/VCC Bounce MIN TYP MAX UNIT VOHV Maximum dynamic VOH VCC = 3.0V, 25°C, CL = 50pF (including jig capacitance) 2.2 2.3 V VOLP Maximum dynamic VOL VCC = 3.3V, 25°C, CL = 50pF LVT22V10-7 0.7 1.1 V VOLP Maximum dynamic VOL CC , , L (including jig capacitance) LVT22V10B7 1.0 1.1 V NOTES: 1. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included. 2. The bus hold circuit can sink at least the minimum low sustaining current at VIL MAX. IBHL should be measured after lowering VIN to GND and then raising it to VIL MAX. 3. The bus hold circuit can source at least the minimum high sustaining current at VIH MIN. IBHL should be measured after raising VIN to VCC and then lowering it to VIH MIN. 4. An external driver must source at least IBHLO to switch this node from low to high. 5. An external driver must sink at least IBHHO to switch this node from high to low. 6. I/O pin leakage is the worst case of IOZX or IIX (where X = H or L). 7. No more than one output should be tested at a time. Duration of the short-circuit test should not exceed one second. VOUT = 0.5V has been chosen to avoid test problems caused by tester ground degradation. 8. This parameter is valid for any VCC between 0V and 1.2 V with a transition time up to 10 mS. From VCC = 1.2 to VCC = 3.3V ±0.3V a transition time of 100 µS is permitted. X = Don’t care. 9. These parameters are not 100% tested, but are evaluated at initial characterization and at any time the design is modified where input current may be affected. |
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