1997 Feb 21

2

Philips Semiconductors

Product specification

NPN microwave power transistor

LTE42012R

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor provides excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

• Input matching cell improves input impedance and

allows an easier design of wideband circuits.

APPLICATIONS

• Common emitter class-A power amplifiers up to 4.2 GHz

in CW conditions for military and professional

applications.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a SOT440A metal ceramic flange package with the emitter

connected to the flange.

PINNING - SOT440A

PIN

DESCRIPTION

1

collector

2

base

3

emitter connected to flange

Fig.1 Simplified outline and symbol.

Marking code: 198

olumns

e

c

b

MAM131

3

1

2

Top view

QUICK REFERENCE DATA

MODE OF OPERATION

f

(GHz)

(V)

(mA)

(W)

(dB)

(

Ω)

(

Ω)

Class-A (CW)

4.2

16

400

≥1

≥6

7.5 + j12

4

− j8

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.