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AM41DL1624DT30IT Datasheet(PDF) 46 Page - Advanced Micro Devices |
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AM41DL1624DT30IT Datasheet(HTML) 46 Page - Advanced Micro Devices |
46 / 63 page Am41DL16x4D 45 P R E L IMINARY AC CHARACTERISTICS Flash Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. Parameter Speed Options Unit JEDEC Std Description Min 70 85 tAVAV tWC Write Cycle Time (Note 1) Min 70 85 ns t AVWL t AS Address Setup Time (WE# to Address) Min 0 ns t ASO Address Setup Time to OE# or CE#f low during toggle bit polling Min 15 ns tWLAX tAH Address Hold Time (WE# to Address) Min 45 ns t AHT Address Hold Time From CE#f or OE# high during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 35 ns t WHDX t DH Data Hold Time Min 0 ns tOEH OE# Hold Time Read Min 0 ns Toggle and Data# Polling Min 10 ns tOEPH Output Enable High during toggle bit polling Min 20 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to CE#f Low) Min 0 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time (CE#f to WE#) Min 0 ns tELWL tCS CE#f Setup Time (WE# to CE#f) Min 0 ns t EHWH t WH WE# Hold Time (CE#f to WE#) Min 0 ns tWHEH tCH CE#f Hold Time (CE#f to WE#) Min 0 ns t WLWH t WP Write Pulse Width Min 30 35 ns tELEH tCP CE#f Pulse Width Min 30 35 ns t WHDL t WPH Write Pulse Width High Min 0 ns tSR/W Latency Between Read and Write Operations Min 0 ns t WHWH1 t WHWH1 Programming Operation (Note 2) Typ 7 µs tWHWH1 tWHWH1 Accelerated Programming Operation (Note 2) Typ 4 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec tVCS VCCf Setup Time (Note 1) Min 50 µs t RB Write Recovery Time from RY/BY# Min 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Max 90 ns |
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