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LLE18150X Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. LLE18150X
Description  NPN silicon planar epitaxial microwave power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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LLE18150X Datasheet(HTML) 2 Page - NXP Semiconductors

   
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September 1994
2
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.7 GHz and 2.0 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
FO-229 glued cap metal ceramic
flange package, with emitter
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common emitter class AB
amplifier.
PINNING - FO-229
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(
Ω)
Class AB (CW)
1.85
24
0.05
≥12
≥7.8
typ. 43
see Figs 6
and 7
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
Fig.1 Simplified outline and symbol.
handbook, 4 columns
1
2
3
Top view
e
c
b
MAM112
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.


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