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LLE18100X Datasheet(PDF) 2 Page - NXP Semiconductors |
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LLE18100X Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 9 page  November 1994 2 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input prematching ensures good stability and allows an easier design of wideband circuits. PINNING - SOT437A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. APPLICATIONS Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.85 GHz. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. PIN CONFIGURATION MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ZI/ZL ( Ω) class AB (CW) 1.85 24 0.1 ≥ 9 ≥ 8 see Figs 8 and 9 handbook, halfpage e c b MBB012 Fig.1 Simplified outline and symbol. fpage MBC045 1 2 3 Top view WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. |
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