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LLE18100X Datasheet(PDF) 5 Page - NXP Semiconductors |
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LLE18100X Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 9 page 
November 1994 5 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X List of components (see bias circuit) Notes 1. In thermal contact with TR1. 2. In thermal contact with D.U.T. COMPONENT DESCRIPTION VALUE CATALOGUE NO. TR1 transistor, BDT85 (or equivalent) D1 diode, BY239800 (or equivalent) note 1 D2 diode, BY239800 note 2 R1 resistor 100 Ω R2 resistor 3.3 k Ω R3 resistor 56 Ω P1 potentiometer, 10 turns (sfernice) 4.7 k Ω C1 electrolytic capacitor 10 µF, 40 V C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003 L1 5 turns 0.5 mm copper wire with ferrite bead L2 5 turns 0.5 mm copper wire Fig.4 Prematching test circuit board. Dimensions in mm Substrate : Epsilam 10 Thickness : 0.635 mm Permittivity : εr = 10 handbook, full pagewidth MCD660 1 5.5 0.635 0.7 0.7 11 2 6.5 3 1 2 3.2 2.3 6 6 0.635 3.2 4.9 30 mm 40 mm 30 mm 40 mm input output 3 1 9.1 3.5 5 1 11.5 10 2 3.4 3 0.7 0.7 |
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