Electronic Components Datasheet Search |
|
LLE18100X Datasheet(PDF) 4 Page - NXP Semiconductors |
|
LLE18100X Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page November 1994 4 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X THERMAL CHARACTERISTICS CHARACTERISTICS Tmb = 25 °C unless otherwise specified APPLICATION INFORMATION Microwave performance up to Tmb =25 °C in a common emitter class AB amplifier (note 1). Note 1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size. SYMBOL PARAMETER CONDITIONS MAX. Rth j-mb thermal resistance from junction to mounting base Tj = 100 °C 4.2 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 20 V; IE =0 − 1mA ICER collector cut-off current VCE = 30 V; RBE = 220 Ω − 10 mA ICEO collector cut-off current VCE = 20 V; IB =0 − 10 mA IEBO emitter cut-off current VEB = 1.5 V; IC =0 − 100 µA hFE DC current gain VCE =3 V; IC =1 A 15 100 MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) Zi/ZL ( Ω) class AB (CW) 1.85 24 0.1 ≥ 9; typ. 11 ≥ 8; typ. 10 see Figs 8 and 9 |
Similar Part No. - LLE18100X |
|
Similar Description - LLE18100X |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |