November 1994

4

Philips Semiconductors

Product specification

NPN silicon planar epitaxial microwave

power transistor

LLE18100X

THERMAL CHARACTERISTICS

CHARACTERISTICS

APPLICATION INFORMATION

Note

1. The test circuit is split into 2 independant halves each being 30

× 40 mm in size.

SYMBOL

PARAMETER

CONDITIONS

MAX.

thermal resistance from junction to mounting base

4.2 K/W

thermal resistance from mounting base to heatsink

0.2 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector cut-off current

−

1mA

collector cut-off current

−

10

mA

collector cut-off current

−

10

mA

emitter cut-off current

−

100

µA

DC current gain

15

100

MODE OF OPERATION

f

(GHz)

(V)

(A)

(W)

(dB)

(

Ω)

class AB (CW)

1.85

24

0.1

≥ 9;

typ. 11

≥ 8;

typ. 10

see Figs 8 and 9