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LLE18100X Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. LLE18100X
Description  NPN silicon planar epitaxial microwave power transistor
Download  9 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

LLE18100X Datasheet(HTML) 4 Page - NXP Semiconductors

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November 1994
4
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C in a common emitter class AB amplifier (note 1).
Note
1. The test circuit is split into 2 independant halves each being 30
× 40 mm in size.
SYMBOL
PARAMETER
CONDITIONS
MAX.
Rth j-mb
thermal resistance from junction to mounting base
Tj = 100 °C
4.2 K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.2 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 20 V;
IE =0
1mA
ICER
collector cut-off current
VCE = 30 V;
RBE = 220 Ω
10
mA
ICEO
collector cut-off current
VCE = 20 V;
IB =0
10
mA
IEBO
emitter cut-off current
VEB = 1.5 V;
IC =0
100
µA
hFE
DC current gain
VCE =3 V;
IC =1 A
15
100
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
Zi/ZL
(
Ω)
class AB (CW)
1.85
24
0.1
≥ 9;
typ. 11
≥ 8;
typ. 10
see Figs 8 and 9


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