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LLE18010X Datasheet(PDF) 7 Page - NXP Semiconductors |
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LLE18010X Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page  1999 Apr 22 7 Philips Semiconductors Product specification NPN microwave power transistor LLE18010X Fig.5 Load power as a function of input power. VCE = 24 V; f = 1.85 GHz; ICQ = 10 mA. handbook, halfpage 0 0.05 0.1 0.15 0.2 0.25 1.6 0.4 0 0.8 1.2 MLC449 P L (W) P (W) i Input and optimum load impedances VCE = 24 V; ICQ = 50 mA (see Figs 6 and 7); typical values at PL =PL1. f (GHz) Zi ( Ω) ZL ( Ω) 1.50 4.7 + j12.0 8.2 + j21.7 1.60 5.0 + j13.0 7.3 + j20.5 1.70 5.5 + j14.0 6.5 + j19.0 1.80 6.0 + j15.2 6.2 + j17.5 1.90 6.7 + j16.5 5.9 + j16.0 |
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