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AM29LV800B Datasheet(PDF) 5 Page - Advanced Micro Devices

Part No. AM29LV800B
Description  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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Maker  AMD [Advanced Micro Devices]
Homepage  http://www.amd.com
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AM29LV800B Datasheet(HTML) 5 Page - Advanced Micro Devices

 
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This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This
Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21490
Rev: G Amendment/+5
Issue Date: May 25, 2005
Am29LV800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
• Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
• Manufactured on 0.32 µm process
technology
— Compatible with 0.5 µm Am29LV800 device
• High performance
— Access times as fast as 70 ns
• Ultra low power consumption (typical
values at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/e+5rase current
• Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
• Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
• Top or bottom boot block configurations
available
• Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
• Minimum 1 million write cycle guarantee
per sector
• 20-year data retention at 125°C
— Reliable operation for the life of the system
• Package option
—48-ball FBGA
— 48-pin TSOP
—44-pin SO
— Known Good Die (KGD)
(see publication number 21536)
• Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
• Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
• Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
• Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
• Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
For new designs, S29AL008D supersedes Am29LV800B and is the factory-recommended migration path for this device. Please refer to the S29AL008D Family Datasheet for specifications
and ordering information.


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