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MIMD10A Datasheet(PDF) 2 Page - Diodes Incorporated

Part # MIMD10A
Description  DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MIMD10A Datasheet(HTML) 2 Page - Diodes Incorporated

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DS30381 Rev. 6 - 2
2 of 4
MIMD10A
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
Vl(off)
-0.3
¾¾
V
VCC = -5V, IO = -100
mA
Vl(on)
¾¾
-1.5
VO = 0.3, IO = -100mA
Output Voltage
VO(on)
¾
-0.1
-0.3
V
IO = -100mA/-5mA
Input Current
Il
¾¾
-25
mA
VI = -2V
Output Current
IO(off)
¾¾
-0.5
mA
VCC = -50V, VI = 0V
DC Current Gain
Gl
68
¾¾
¾
¾
Gain-Bandwidth Product*
fT
¾
200
¾
MHz
VCE = -10V, IE = -50mA,
f = 100MHz
Electrical Characteristics PNP Section Tr1 @ TA = 25°C unless otherwise specified
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2 @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
¾¾
V
IC = 50
mA
Collector-Emitter Breakdown Voltage
BVCEO
50
¾¾
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
5
¾¾
V
IE = 50
mA
Collector Cutoff Current
ICBO
¾¾
0.5
mA
VCB = 50V
Emitter Cutoff Current
IEBO
¾¾
0.5
mA
VEB = 4V
Collector-Emitter Saturation Voltage
VCE(sat)
¾¾
0.3
V
IC/IB = 10mA / 1.0mA
DC Current Transfer Ratio
hFE
100
250
600
¾
IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
fT
¾
250
¾
MHz
VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
Date Code Key
C73 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
C73
Marking Information
Device
Packaging
Shipping
MIMD10A-7-F
SOT-363
3000/Tape & Reel
Ordering Information (Note 3)
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Year
2003
2004
2005
2006
2007
2008
2009
2010
2011
Code
PR
S
T
U
VW
X
Y
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.


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