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LFE18500X Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. LFE18500X
Description  NPN silicon planar epitaxial microwave power transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

LFE18500X Datasheet(HTML) 3 Page - NXP Semiconductors

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December 1994
3
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LFE18500X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
45
V
VCER
collector-emitter voltage
RBE = 220 Ω−
30
V
VCEO
collector-emitter voltage
open base
22
V
VEBO
emitter-base voltage
open collector
3V
IC
DC collector current
12
A
Pi
input power
f = 1.85 GHz; VCE = 24 V; class AB −
20
W
Ptot
total power dissipation
Tmb =75 °C
120
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
200
°C
Tsld
soldering temperature
t
≤ 10 s; note 1
235
°C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
40
0
MLC430
150
T
( C)
o
mb
Ptot
(W)
80
120
160


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