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LFE18500X Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. LFE18500X
Description  NPN silicon planar epitaxial microwave power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

LFE18500X Datasheet(HTML) 4 Page - NXP Semiconductors

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December 1994
4
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LFE18500X
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tmb =25 °C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C in a common emitter class AB amplifier.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tj = 100 °C
1
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
6mA
V(BR)CER
collector-emitter breakdown voltage
IC = 30 mA; RBE =56 Ω
30
V
V(BR)CBO
collector-base breakdown voltage
IC =30mA
45
V
V(BR)EBO
emitter-base breakdown voltage
IE =30mA
3
V
hFE
DC current gain
IC = 1 A; VCE = 5 V
15
100
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(
Ω)
Class AB (CW)
1.85
24
0.2
≥48
typ. 53
≥7
typ. 7.5
typ. 42
see Figs 7
and 8


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