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LFE15600X Datasheet(PDF) 4 Page - NXP Semiconductors |
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LFE15600X Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X THERMAL CHARACTERISTICS Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb =25 °C unless otherwise specified. APPLICATION INFORMATION Microwave performance up to Tmb =25 °C in a common emitter class AB amplifier. SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 100 °C 1.2 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.2 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =20V − 6mA V(BR)CER collector-emitter breakdown voltage IC = 30 mA; RBE =56 Ω 30 − V V(BR)CBO collector-base breakdown voltage IC =30mA 45 − V V(BR)EBO emitter-base breakdown voltage IE =30mA 3 − V hFE DC current gain IC = 1 A; VCE = 5 V 15 100 MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi/ZL ( Ω) Class AB (CW) 1.5 24 0.2 ≥55 typ. 60 ≥8 typ. 8.5 typ. 50 see Figs 7 and 8 |
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