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LEE1015 Datasheet(PDF) 4 Page - NXP Semiconductors |
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LEE1015 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor LEE1015T THERMAL CHARACTERISTICS Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb =25 °C unless otherwise specified. APPLICATION INFORMATION Microwave performance up to Tmb =25 °C in the test circuit. SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj =75 °C 12 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.6 K/W SYMBOL PARAMETER CONDITIONS MAX. UNIT ICBO collector cut-off current VCB =40V; IE = 0 400 µA ICER collector cut-off current VCE =40V; RBE =10 Ω 20 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 400 µA MODE OF OPERATION f (MHz) VCE (V) IC (mA) PL1 (W) Gpo (dB) Class A 860 20 140 >1; typ. 1.3 >13; typ. 14.5 MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 |
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