LBE2003S datasheet(10/16 Pages) PHILIPS

Part #	LBE2003S

Description	NPN microwave power transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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10 / 16 page

1997 Mar 03

10

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistors

LBE2003S; LBE2009S;

LCE2009S

Microwave performance for LBE2009S; LCE2009S up to Tmb =75 °C in a common emitter class-A test circuit; note 1.

Notes

1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.

2. IC and VCE regulated.

3. Load power for 1 dB compressed power gain.

4. Low level power gain associated with PL1.

MODE OF OPERATION

f

(GHz)

VCE

(V) (2)

IC

(mA) (2)

PL1

(mW) (3)

Gpo

(dB) (4)

Zi

(

Ω)

ZL

(

Ω)

Class-A (CW)

2

18

110

≥700 (28.5)

typ. 900 (29.5)

≥9

typ. 9.8

7.5 + j14.5

17.5 + j38.5

Fig.10 Prematching test circuit board for 2 GHz.

Dimensions in mm.

Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (

εr = 2.54); thickness: 0.8 mm.

handbook, full pagewidth

12.4

26.4

1.2

13

25

MGD999

2

6.8

5.2

0.8

2

input

VSWR

< 3.5

Zo = 50 Ω

output

VSWR

< 3

Zo = 50 Ω

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

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