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LBE2003S Datasheet(PDF) 10 Page - NXP Semiconductors |
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LBE2003S Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 16 page 1997 Mar 03 10 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S; LCE2009S Microwave performance for LBE2009S; LCE2009S up to Tmb =75 °C in a common emitter class-A test circuit; note 1. Notes 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. 2. IC and VCE regulated. 3. Load power for 1 dB compressed power gain. 4. Low level power gain associated with PL1. MODE OF OPERATION f (GHz) VCE (V) (2) IC (mA) (2) PL1 (mW) (3) Gpo (dB) (4) Zi ( Ω) ZL ( Ω) Class-A (CW) 2 18 110 ≥700 (28.5) typ. 900 (29.5) ≥9 typ. 9.8 7.5 + j14.5 17.5 + j38.5 Fig.10 Prematching test circuit board for 2 GHz. Dimensions in mm. Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric ( εr = 2.54); thickness: 0.8 mm. handbook, full pagewidth 12.4 26.4 1.2 13 25 MGD999 2 6.8 5.2 0.8 2 2 2 input VSWR < 3.5 Zo = 50 Ω output VSWR < 3 Zo = 50 Ω LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 |
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