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LESD8D5.0CAT5G Datasheet(PDF) 2 Page - Guangdong Youtai Semiconductor Co., Ltd.

Part # LESD8D5.0CAT5G
Description  These are Pb−Free Devices
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Manufacturer  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
Direct Link  https://www.umw-ic.com/
Logo UMW - Guangdong Youtai Semiconductor Co., Ltd.

LESD8D5.0CAT5G Datasheet(HTML) 2 Page - Guangdong Youtai Semiconductor Co., Ltd.

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ELECTRICAL CHARACTERISTICS
Other voltage available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃
3. Surge current waveform per Figure 3.
Device
IR2(mA)
@ VR
VBR (V) @ IT
(Note 2)
IT
C (pF)
VC (V)
@ IPP = 1 A
(Note 3)
Max
Max
Min
mA
Max
LESD8D5.0CA
5.0
0.3
5.6
1.0
9.8
15
VRWM
(V)
IR1(mA)
@ VRWM
Max
0.5
=3.5V
VC (V)
@MAX IPP
(Note 3)
Max
12.5
IPP(A)
Max
5.5
(Note 3)
PPK(W)
Max
69
(Note 3)
Max
8.0
Max
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
Ppk
Peak Power Dissipation
C
Capacitance @ VR = 0 and f = 1.0 MHz
Bi−Directional TVS
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VC VBR
VRWM
VC
VBR
www.umw-ic.com
2
友台半导体有限公司
UMW
LESD8D5.0CA
R


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