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PA2423U Datasheet(PDF) 1 Page - SiGe Semiconductor, Inc.

Part No. PA2423U
Description  RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
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Maker  SIGE [SiGe Semiconductor, Inc.]
Homepage  http://www.sige.com
Logo SIGE - SiGe Semiconductor, Inc.

PA2423U Datasheet(HTML) 1 Page - SiGe Semiconductor, Inc.

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PA2423U
RangeCharger
TM 2.4 GHz Bluetoothtm Power Amplifier IC
Preliminary
131-DST-01 Rev 1.1 Apr-18-2006
Confidential
1 of 10
QA041806
Applications
Bluetooth
tm wireless technology (Class 1)
USB dongles
PCMCIA, flash cards
Access points
2.4 GHz cordless telephone
Features
+22.5 dBm Output Power
Low current 108 mA typical @ POUT = +20 dBm
CMOS Enable Interface
Power-control and power-down modes
3.3 V single supply operation
Thin, lead-free 6 pin QFN package
Ordering Information
Part Number
Package
Remark
PA2423U
6 pin QFN
(0.5 mm height)
Samples
PA2423U-R
6 pin QFN
(0.5 mm height)
Tape &
Reel
PA2423U-EV1
Evaluation Kit
Product Description
A monolithic, high-efficiency, silicon-germanium power
amplifier IC, the PA2423U is designed for 2.4 GHz
wireless applications, including Bluetooth
TM Class1 and
2.4 GHz cordless telephone applications. It delivers
+22.5 dBm output power making it capable of
overcoming insertion losses of up to 2.5 dB between
amplifier output and antenna input.
The PA2423U provides a digital control input for
controlling power up and power down modes of
operation.
The PA2423U operates at 3.3 V DC. At typical output
power level (+22.5 dBm), the current consumption is
135 mA.
The
silicon/silicon-germanium
structure
of
the
PA2423U, and its exposed die-pad package, soldered
to the system PCB, provide high thermal conductivity
and a subsequently low junction temperature. This
device is capable of operating at a duty cycle of 100
percent. The device is pin for pin compatible to the
PA2423L.
Functional Block Diagram
Stage 1
Stage 2
Interstage
Match
Bias Generator
Control
Circuitry
V CT L
V CC0
V RA MP
OUT/V CC2
V CC1
GND
GND
IN
Figure 1: PA2423U Block Diagram


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