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MMBT4126 Datasheet(PDF) 2 Page - Diodes Incorporated

Part No. MMBT4126
Description  PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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MMBT4126 Datasheet(HTML) 2 Page - Diodes Incorporated

   
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DS30106 Rev. 7 - 2
2 of 4
MMBT4126
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-25
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-25
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-4.0
¾
V
IE = -10mA, IC = 0
Collector Cutoff Current
ICBO
¾
-50
nA
VCB = -20V, IE = 0V
Emitter Cutoff Current
IEBO
¾
-50
nA
VEB = -3.0V, IC = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
120
60
360
¾
¾
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.40
V
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
¾
-0.95
V
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
¾
VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
250
¾
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2B
Marking Information
Device
Packaging
Shipping
MMBT4126-7-F
SOT-23
3000/Tape & Reel
Ordering Information
Date Code Key
(Note 4)
Note:
3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z


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