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IRG4PC50UDPBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRG4PC50UDPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC50UDPBF Datasheet(HTML) 1 Page - International Rectifier

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IRG4PC50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
------
------
0.64
RθJC
Junction-to-Case - Diode
------
------
0.83
°C/W
RθCS
Case-to-Sink, flat, greased surface
------
0.24
------
RθJA
Junction-to-Ambient, typical socket mount
-----
-----
40
Wt
Weight
------
6 (0.21)
------
g (oz)
Thermal Resistance
UltraFast CoPack IGBT
04/23/04
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
55
IC @ TC = 100°C
Continuous Collector Current
27
ICM
Pulsed Collector Current
Q
220
A
ILM
Clamped Inductive Load Current
R
220
IF @ TC = 100°C
Diode Continuous Forward Current
25
IFM
Diode Maximum Forward Current
220
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
200
PD @ TC = 100°C
Maximum Power Dissipation
78
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf•in (1.1 N•m)
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBT's
PD -95185
W
TO-247AC
www.irf.com
1
• Lead-Free


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